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Optically Writable Atomic Vapor Memory as a Substrate for Optical Reservoir Computing

We present an optical random access memory (ORAM) based on warm cesium (Cs) atomic vapor and demonstrate its operation as the physical substrate of a reservoir computer. Information is stored in the hyperfine population distribution of a Cs ensemble via optical pumping and retrieved through differential probe absorption. Spatial multiplexing via acousto-optic deflection provides eight addressable memory rails able to store up to 3.8 bits of information per rail. Employing this platform as a temporally multiplexed reservoir, we achieve a kernel rank ($\mathrm{KR}= 8.8 \pm 0.4$), and a minimum bit error rate of $0.02 \pm 0.01$ on the Exclusive-or (XOR) benchmark. We find the limited memory lifetime constrains the achievable temporal depth, encouraging further research into fast addressable memories. This constitutes the first demonstration of a free-space, optically writable atomic RAM as a substrate in an optical reservoir computing system.

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